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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1667
DESCRIPTION With TO-220F package Complement to type 2SB1134 Low collector saturation voltage APPLICATIONS Relay drivers,high-speed inverters,and other general high-current switching applications
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER

CHA IN
Collector current
Collector-base voltage
Collector-emitter voltage
E SEM NG
Open base
OND IC
CONDITIONS
TOR UC
MAX 60 50 6 5 9 UNIT V V V A A
Open emitter
Emitter-base voltage
Open collector
Collector current-peak Ta=25ae
2 W 25 150 -55~150 ae ae
PC
Collector dissipation TC=25ae
Tj Tstg
Junction temperature Storage temperature
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance CONDITIONS IC=1mA ;RBE= IC=1mA ;IE=0 IE=1mA ;IC=0 IC=3A; IB=0.3A VCB=40V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=3A ; VCE=2V IE=0 ; VCB=10V;f=1MHz IC=1A ; VCE=5V 70 30 MIN 50 60 6
2SD1667
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 COB fT
TYP.
MAX
UNIT V V V
0.4 100 100 280 |I |I
V A A
Transition frequency

Switching times ton ts tf
CHA IN
Turn-on time Storage time Fall time
E SEM NG
OND IC
TOR UC
100 30 0.1 |I |I |I
pF MHz
s s s
IC=2.0A; IB1=-IB2=0.2A VCC=20V;R=10|
1.4 0.2
hFE-1 Classifications Q 70-140 R 100-200 S 140-280
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1667

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1667

CHA IN
E SEM NG
OND IC
TOR UC
4


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